Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics
Discussed in this paper are options for replacing the virtual structure of SiC
 atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid
 epitaxial processes have been obtained as a result of carbothermic reduction. Analized is
 the role of precursors i...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118271 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862726092466421760 |
|---|---|
| author | Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. |
| author_facet | Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. |
| citation_txt | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Discussed in this paper are options for replacing the virtual structure of SiC
atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid
epitaxial processes have been obtained as a result of carbothermic reduction. Analized is
the role of precursors in the way of reducing the formation temperature for stable phases
of aluminum oxynitrocarbide during epitaxy of aluminum nitride in the presence of
carbon atoms. The dependence on preparation conditions for the aluminum single
oxycarbide crystal structure has been explored. The influence of partial 2H-SiC crystal
structure on the state of the single oxycarbide crystal structure was determined. The
semiconductor AlNOC has been experimentally obtained.
|
| first_indexed | 2025-12-07T18:55:47Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118271 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:55:47Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. 2017-05-29T14:38:33Z 2017-05-29T14:38:33Z 2012 Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 77.84.Bw https://nasplib.isofts.kiev.ua/handle/123456789/118271 Discussed in this paper are options for replacing the virtual structure of SiC
 atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid
 epitaxial processes have been obtained as a result of carbothermic reduction. Analized is
 the role of precursors in the way of reducing the formation temperature for stable phases
 of aluminum oxynitrocarbide during epitaxy of aluminum nitride in the presence of
 carbon atoms. The dependence on preparation conditions for the aluminum single
 oxycarbide crystal structure has been explored. The influence of partial 2H-SiC crystal
 structure on the state of the single oxycarbide crystal structure was determined. The
 semiconductor AlNOC has been experimentally obtained. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics Article published earlier |
| spellingShingle | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. |
| title | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_full | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_fullStr | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_full_unstemmed | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_short | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_sort | carbides of a³b⁵ compounds – new class materials for opto- and microelectronics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118271 |
| work_keys_str_mv | AT osinskyvi carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics AT masoliv carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics AT lyahovann carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics AT deminskypv carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics |