Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Osinsky, V.I., Masol, I.V., Lyahova, N.N., Deminsky, P.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118271
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ.

Discussed in this paper are options for replacing the virtual structure of SiC
 atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid
 epitaxial processes have been obtained as a result of carbothermic reduction. Analized is
 the role of precursors i...