Narrow-gap piezoelectric heterostructure as IR detector
Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrie...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2012 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118277 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-118277 |
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Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. 2017-05-29T14:42:51Z 2017-05-29T14:42:51Z 2012 Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 72.40.+w, 77.65.Ly, 81.05.Dz https://nasplib.isofts.kiev.ua/handle/123456789/118277 Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm) infrared spectral range without cryogenic cooling to achieve performance level D* = 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties. The authors are grateful to Dr V. Kladko for his helpful cooperation with the X-ray diffraction experiment. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Narrow-gap piezoelectric heterostructure as IR detector Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Narrow-gap piezoelectric heterostructure as IR detector |
| spellingShingle |
Narrow-gap piezoelectric heterostructure as IR detector Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| title_short |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_full |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_fullStr |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_full_unstemmed |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_sort |
narrow-gap piezoelectric heterostructure as ir detector |
| author |
Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| author_facet |
Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE
methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were
investigated as a piezoelectric heterostructure for IR detection. The photoresponse,
infrared transmittance spectra, parameters of the charge carrier transport, and mechanical
properties were studied. Mechanical stresses at the layer-substrate interface were
analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm)
infrared spectral range without cryogenic cooling to achieve performance level D*
= 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be
based on the possibility of the spatial separation of the non-equilibrium carriers in the
strained semiconductor heterostructure with piezoelectric properties.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118277 |
| citation_txt |
Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. |
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| first_indexed |
2025-12-07T13:32:16Z |
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2025-12-07T13:32:16Z |
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