Narrow-gap piezoelectric heterostructure as IR detector
Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE
 methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were
 investigated as a piezoelectric heterostructure for IR detection. The photoresponse,
 infrared transmittance spectra, paramet...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118277 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862624279547346944 |
|---|---|
| author | Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| author_facet | Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| citation_txt | Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE
methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were
investigated as a piezoelectric heterostructure for IR detection. The photoresponse,
infrared transmittance spectra, parameters of the charge carrier transport, and mechanical
properties were studied. Mechanical stresses at the layer-substrate interface were
analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm)
infrared spectral range without cryogenic cooling to achieve performance level D*
= 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be
based on the possibility of the spatial separation of the non-equilibrium carriers in the
strained semiconductor heterostructure with piezoelectric properties.
|
| first_indexed | 2025-12-07T13:32:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118277 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:32:16Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. 2017-05-29T14:42:51Z 2017-05-29T14:42:51Z 2012 Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 72.40.+w, 77.65.Ly, 81.05.Dz https://nasplib.isofts.kiev.ua/handle/123456789/118277 Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE
 methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were
 investigated as a piezoelectric heterostructure for IR detection. The photoresponse,
 infrared transmittance spectra, parameters of the charge carrier transport, and mechanical
 properties were studied. Mechanical stresses at the layer-substrate interface were
 analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm)
 infrared spectral range without cryogenic cooling to achieve performance level D*
 = 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be
 based on the possibility of the spatial separation of the non-equilibrium carriers in the
 strained semiconductor heterostructure with piezoelectric properties. The authors are grateful to Dr V. Kladko for his helpful
 cooperation with the X-ray diffraction experiment. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Narrow-gap piezoelectric heterostructure as IR detector Article published earlier |
| spellingShingle | Narrow-gap piezoelectric heterostructure as IR detector Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| title | Narrow-gap piezoelectric heterostructure as IR detector |
| title_full | Narrow-gap piezoelectric heterostructure as IR detector |
| title_fullStr | Narrow-gap piezoelectric heterostructure as IR detector |
| title_full_unstemmed | Narrow-gap piezoelectric heterostructure as IR detector |
| title_short | Narrow-gap piezoelectric heterostructure as IR detector |
| title_sort | narrow-gap piezoelectric heterostructure as ir detector |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118277 |
| work_keys_str_mv | AT sizovff narrowgappiezoelectricheterostructureasirdetector AT smirnovab narrowgappiezoelectricheterostructureasirdetector AT savkinark narrowgappiezoelectricheterostructureasirdetector AT deriglazovva narrowgappiezoelectricheterostructureasirdetector AT yakushevmv narrowgappiezoelectricheterostructureasirdetector |