Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

The change in mobility with increasing the temperature which may be due to
 the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial
 pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions
 are not...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2012
Main Authors: Ermakov, V.M., Kolomoets, V.V., Panasyuk, L.I., Nazarchuk, P.F., Yashchynskiy, L.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118279
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Contribution of f- and g- transitions to electron intervalley scattering
 of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The change in mobility with increasing the temperature which may be due to
 the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial
 pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions
 are not completely removed from valleys located in the plane (100). In this
 case, there is no change in the slope of the dependence logρ vs. logT for the
 temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley
 scattering occurs, while the observed is tha decisive role of f–transitions to this
 scattering.
ISSN:1560-8034