Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• Автори: Ermakov, V.M., Kolomoets, V.V., Panasyuk, L.I., Nazarchuk, P.F., Yashchynskiy, L.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118279
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Contribution of f- and g- transitions to electron intervalley scattering
 of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ.

The change in mobility with increasing the temperature which may be due to
 the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial
 pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions
 are not completely removed from valleys located in the plane (100). In this
 case, there is no change in the slope of the dependence logρ vs. logT for the
 temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley
 scattering occurs, while the observed is tha decisive role of f–transitions to this
 scattering.