Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
The change in mobility with increasing the temperature which may be due to
 the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial
 pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions
 are not...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118279 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Contribution of f- and g- transitions to electron intervalley scattering
 of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862706168289296384 |
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| author | Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. |
| author_facet | Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. |
| citation_txt | Contribution of f- and g- transitions to electron intervalley scattering
 of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The change in mobility with increasing the temperature which may be due to
the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial
pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions
are not completely removed from valleys located in the plane (100). In this
case, there is no change in the slope of the dependence logρ vs. logT for the
temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley
scattering occurs, while the observed is tha decisive role of f–transitions to this
scattering.
|
| first_indexed | 2025-12-07T16:57:44Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118279 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:57:44Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. 2017-05-29T14:43:53Z 2017-05-29T14:43:53Z 2012 Contribution of f- and g- transitions to electron intervalley scattering
 of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS 72.20.Dp https://nasplib.isofts.kiev.ua/handle/123456789/118279 The change in mobility with increasing the temperature which may be due to
 the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial
 pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions
 are not completely removed from valleys located in the plane (100). In this
 case, there is no change in the slope of the dependence logρ vs. logT for the
 temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley
 scattering occurs, while the observed is tha decisive role of f–transitions to this
 scattering. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K Article published earlier |
| spellingShingle | Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. |
| title | Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_full | Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_fullStr | Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_full_unstemmed | Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_short | Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_sort | contribution of f- and g- transitions to electron intervalley scattering of n-s at temperatures 300 to 450 k |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118279 |
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