Graded-gap AlInN Gunn diodes
The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequ...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118284 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The paper deals with the numerical simulation of Gunn diodes operation based
on the graded-gap AlInN. We have obtained the output characteristics of diodes with
different cathode contacts in a wide range of frequencies. Harmonic and biharmonic
modes of operation have been considered. Cutoff frequency and minimum length of the
active region have been estimated. Performances of graded-gap AlInN diodes are
compared with the performances of InN and AlN diodes
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| ISSN: | 1560-8034 |