Graded-gap AlInN Gunn diodes
The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequ...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118284 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118284 |
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Storozhenko, I.P. Yaroshenko, A.N. Kaydash, M.V. 2017-05-29T14:52:38Z 2017-05-29T14:52:38Z 2012 Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 61.72.uj, 73.40.Lq, 85.30.Fg https://nasplib.isofts.kiev.ua/handle/123456789/118284 The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Graded-gap AlInN Gunn diodes Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Graded-gap AlInN Gunn diodes |
| spellingShingle |
Graded-gap AlInN Gunn diodes Storozhenko, I.P. Yaroshenko, A.N. Kaydash, M.V. |
| title_short |
Graded-gap AlInN Gunn diodes |
| title_full |
Graded-gap AlInN Gunn diodes |
| title_fullStr |
Graded-gap AlInN Gunn diodes |
| title_full_unstemmed |
Graded-gap AlInN Gunn diodes |
| title_sort |
graded-gap alinn gunn diodes |
| author |
Storozhenko, I.P. Yaroshenko, A.N. Kaydash, M.V. |
| author_facet |
Storozhenko, I.P. Yaroshenko, A.N. Kaydash, M.V. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The paper deals with the numerical simulation of Gunn diodes operation based
on the graded-gap AlInN. We have obtained the output characteristics of diodes with
different cathode contacts in a wide range of frequencies. Harmonic and biharmonic
modes of operation have been considered. Cutoff frequency and minimum length of the
active region have been estimated. Performances of graded-gap AlInN diodes are
compared with the performances of InN and AlN diodes
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118284 |
| citation_txt |
Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ. |
| work_keys_str_mv |
AT storozhenkoip gradedgapalinngunndiodes AT yaroshenkoan gradedgapalinngunndiodes AT kaydashmv gradedgapalinngunndiodes |
| first_indexed |
2025-12-07T20:08:44Z |
| last_indexed |
2025-12-07T20:08:44Z |
| _version_ |
1850881474427879424 |