Graded-gap AlInN Gunn diodes

The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequ...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2012
Автори: Storozhenko, I.P., Yaroshenko, A.N., Kaydash, M.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118284
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118284
record_format dspace
spelling Storozhenko, I.P.
Yaroshenko, A.N.
Kaydash, M.V.
2017-05-29T14:52:38Z
2017-05-29T14:52:38Z
2012
Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ.
1560-8034
PACS 61.72.uj, 73.40.Lq, 85.30.Fg
https://nasplib.isofts.kiev.ua/handle/123456789/118284
The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Graded-gap AlInN Gunn diodes
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Graded-gap AlInN Gunn diodes
spellingShingle Graded-gap AlInN Gunn diodes
Storozhenko, I.P.
Yaroshenko, A.N.
Kaydash, M.V.
title_short Graded-gap AlInN Gunn diodes
title_full Graded-gap AlInN Gunn diodes
title_fullStr Graded-gap AlInN Gunn diodes
title_full_unstemmed Graded-gap AlInN Gunn diodes
title_sort graded-gap alinn gunn diodes
author Storozhenko, I.P.
Yaroshenko, A.N.
Kaydash, M.V.
author_facet Storozhenko, I.P.
Yaroshenko, A.N.
Kaydash, M.V.
publishDate 2012
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118284
citation_txt Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ.
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first_indexed 2025-12-07T20:08:44Z
last_indexed 2025-12-07T20:08:44Z
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