Efficiency a-Si:H solar cell. Detailed theory
We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of carrier mobilities, thickness of the layers, doping...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2012 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118286 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Efficiency a-Si:H solar cell. Detailed theory / Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 91-116. — Бібліогр.: 21 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862722179148283904 |
|---|---|
| author | Kryuchenko, Yu.V. Sachenko, A.V. Bobyl, A.V. Kostylyov, V.P. Romanets, P.N. Sokolovskyi, I.O. Shkrebti, A.I. Terukov, E.I. |
| author_facet | Kryuchenko, Yu.V. Sachenko, A.V. Bobyl, A.V. Kostylyov, V.P. Romanets, P.N. Sokolovskyi, I.O. Shkrebti, A.I. Terukov, E.I. |
| citation_txt | Efficiency a-Si:H solar cell. Detailed theory / Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 91-116. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of carrier mobilities, thickness of the layers, doping levels and others. Secondly, geometry of the grid fingers that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized, and the effect of non-zero sun beam incidence angles has been included as well. The model allows optimization of the amorphous Si based solar cells in a wide range of key parameters.
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| first_indexed | 2025-12-07T18:34:28Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118286 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:34:28Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kryuchenko, Yu.V. Sachenko, A.V. Bobyl, A.V. Kostylyov, V.P. Romanets, P.N. Sokolovskyi, I.O. Shkrebti, A.I. Terukov, E.I. 2017-05-29T14:56:06Z 2017-05-29T14:56:06Z 2012 Efficiency a-Si:H solar cell. Detailed theory / Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 91-116. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 72.20.Jv, 73.40.Cg, 84.60.Jt, 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/118286 We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of carrier mobilities, thickness of the layers, doping levels and others. Secondly, geometry of the grid fingers that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized, and the effect of non-zero sun beam incidence angles has been included as well. The model allows optimization of the amorphous Si based solar cells in a wide range of key parameters. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Efficiency a-Si:H solar cell. Detailed theory Article published earlier |
| spellingShingle | Efficiency a-Si:H solar cell. Detailed theory Kryuchenko, Yu.V. Sachenko, A.V. Bobyl, A.V. Kostylyov, V.P. Romanets, P.N. Sokolovskyi, I.O. Shkrebti, A.I. Terukov, E.I. |
| title | Efficiency a-Si:H solar cell. Detailed theory |
| title_full | Efficiency a-Si:H solar cell. Detailed theory |
| title_fullStr | Efficiency a-Si:H solar cell. Detailed theory |
| title_full_unstemmed | Efficiency a-Si:H solar cell. Detailed theory |
| title_short | Efficiency a-Si:H solar cell. Detailed theory |
| title_sort | efficiency a-si:h solar cell. detailed theory |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118286 |
| work_keys_str_mv | AT kryuchenkoyuv efficiencyasihsolarcelldetailedtheory AT sachenkoav efficiencyasihsolarcelldetailedtheory AT bobylav efficiencyasihsolarcelldetailedtheory AT kostylyovvp efficiencyasihsolarcelldetailedtheory AT romanetspn efficiencyasihsolarcelldetailedtheory AT sokolovskyiio efficiencyasihsolarcelldetailedtheory AT shkrebtiai efficiencyasihsolarcelldetailedtheory AT terukovei efficiencyasihsolarcelldetailedtheory |