Efficiency a-Si:H solar cell. Detailed theory

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Kryuchenko, Yu.V., Sachenko, A.V., Bobyl, A.V., Kostylyov, V.P., Romanets, P.N., Sokolovskyi, I.O., Shkrebti, A.I., Terukov, E.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118286
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Efficiency a-Si:H solar cell. Detailed theory / Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 91-116. — Бібліогр.: 21 назв. — англ.

We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of carrier mobilities, thickness of the layers, doping...