Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• 1. Verfasser: Boiko, I.I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118302
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Transport phenomena of two-dimensional band carriers
 with Dirac-like energetic spectrum / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 129-138. — Бібліогр.: 12 назв. — англ.

Conductivity of monolayer and bilayer graphene is considered with due regard
 for mutual drag of band electrons and holes. Search of contribution of the drag to
 conductivity shows that it sufficiently influences on mobility at high concentrations of
 carriers, which belong to different groups and have different drift velocities. In bilayer
 system the mutual drag can even change the direction of partial current.
 Magnetoresistivity and Hall effect were theoretically investigated for neutral and gated
 graphene. It is shown that for spatially unlimited neutral graphene Hall effect is totally
 absent. In gated, exactly monopolar graphene for the same case effect of
 magnetoresistivity vanishes; here the Hall constant does not involve any relaxation
 characteristic in contrast to results obtained for the popular method of τ-approximation. It
 is shown that limited sizes of crystal with monopolar conductivity can be cause for
 impressive dependence of the Hall constant and magnetoresistivity on the value of
 external magnetic field.