Application of ferroelectrics to create electroluminescent indicators of temperature

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Boyko, V.G., Zayats, N.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118303
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Application of ferroelectrics to create electroluminescent
 indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ.

In this article, temperature dependences of brightness of thin film
 electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal
 (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their
 comparable analysis with the temperature dependence of dielectric themself has been
 made. Literature data concerning this question have been briefly discussed. The
 conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN,
 LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to
 produce the temperature light indicators has been made. The design of a new temperature
 sensor can be realized in several ways. For example, in the form of the scales with a
 moving luminous column or separate lighting dots, depending on how clearly Curie
 peaks are observed on the temperature curves of dielectric permittivity.