Application of ferroelectrics to create electroluminescent indicators of temperature
In this article, temperature dependences of brightness of thin film electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their comparable analysis with the temperature dependence of dielectr...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118303 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Application of ferroelectrics to create electroluminescent indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Boyko, V.G. Zayats, N.S. 2017-05-29T16:36:53Z 2017-05-29T16:36:53Z 2012 Application of ferroelectrics to create electroluminescent indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 77.55.fe, hd; 77.80.B-, 78.60.Fi https://nasplib.isofts.kiev.ua/handle/123456789/118303 In this article, temperature dependences of brightness of thin film electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their comparable analysis with the temperature dependence of dielectric themself has been made. Literature data concerning this question have been briefly discussed. The conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN, LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to produce the temperature light indicators has been made. The design of a new temperature sensor can be realized in several ways. For example, in the form of the scales with a moving luminous column or separate lighting dots, depending on how clearly Curie peaks are observed on the temperature curves of dielectric permittivity. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Application of ferroelectrics to create electroluminescent indicators of temperature Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| spellingShingle |
Application of ferroelectrics to create electroluminescent indicators of temperature Boyko, V.G. Zayats, N.S. |
| title_short |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_full |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_fullStr |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_full_unstemmed |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_sort |
application of ferroelectrics to create electroluminescent indicators of temperature |
| author |
Boyko, V.G. Zayats, N.S. |
| author_facet |
Boyko, V.G. Zayats, N.S. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this article, temperature dependences of brightness of thin film
electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal
(MDSM) structures with ceramic ferroelectric dielectric have been considered. Their
comparable analysis with the temperature dependence of dielectric themself has been
made. Literature data concerning this question have been briefly discussed. The
conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN,
LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to
produce the temperature light indicators has been made. The design of a new temperature
sensor can be realized in several ways. For example, in the form of the scales with a
moving luminous column or separate lighting dots, depending on how clearly Curie
peaks are observed on the temperature curves of dielectric permittivity.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118303 |
| citation_txt |
Application of ferroelectrics to create electroluminescent indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
AT boykovg applicationofferroelectricstocreateelectroluminescentindicatorsoftemperature AT zayatsns applicationofferroelectricstocreateelectroluminescentindicatorsoftemperature |
| first_indexed |
2025-12-07T20:44:18Z |
| last_indexed |
2025-12-07T20:44:18Z |
| _version_ |
1850883711505006592 |