Application of ferroelectrics to create electroluminescent indicators of temperature

In this article, temperature dependences of brightness of thin film
 electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal
 (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their
 comparable analysis with the temperatur...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2012
Main Authors: Boyko, V.G., Zayats, N.S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118303
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Application of ferroelectrics to create electroluminescent
 indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Boyko, V.G.
Zayats, N.S.
author_facet Boyko, V.G.
Zayats, N.S.
citation_txt Application of ferroelectrics to create electroluminescent
 indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In this article, temperature dependences of brightness of thin film
 electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal
 (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their
 comparable analysis with the temperature dependence of dielectric themself has been
 made. Literature data concerning this question have been briefly discussed. The
 conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN,
 LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to
 produce the temperature light indicators has been made. The design of a new temperature
 sensor can be realized in several ways. For example, in the form of the scales with a
 moving luminous column or separate lighting dots, depending on how clearly Curie
 peaks are observed on the temperature curves of dielectric permittivity.
first_indexed 2025-12-07T20:44:18Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-118303
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T20:44:18Z
publishDate 2012
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Boyko, V.G.
Zayats, N.S.
2017-05-29T16:36:53Z
2017-05-29T16:36:53Z
2012
Application of ferroelectrics to create electroluminescent
 indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ.
1560-8034
PACS 77.55.fe, hd; 77.80.B-, 78.60.Fi
https://nasplib.isofts.kiev.ua/handle/123456789/118303
In this article, temperature dependences of brightness of thin film
 electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal
 (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their
 comparable analysis with the temperature dependence of dielectric themself has been
 made. Literature data concerning this question have been briefly discussed. The
 conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN,
 LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to
 produce the temperature light indicators has been made. The design of a new temperature
 sensor can be realized in several ways. For example, in the form of the scales with a
 moving luminous column or separate lighting dots, depending on how clearly Curie
 peaks are observed on the temperature curves of dielectric permittivity.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Application of ferroelectrics to create electroluminescent indicators of temperature
Article
published earlier
spellingShingle Application of ferroelectrics to create electroluminescent indicators of temperature
Boyko, V.G.
Zayats, N.S.
title Application of ferroelectrics to create electroluminescent indicators of temperature
title_full Application of ferroelectrics to create electroluminescent indicators of temperature
title_fullStr Application of ferroelectrics to create electroluminescent indicators of temperature
title_full_unstemmed Application of ferroelectrics to create electroluminescent indicators of temperature
title_short Application of ferroelectrics to create electroluminescent indicators of temperature
title_sort application of ferroelectrics to create electroluminescent indicators of temperature
url https://nasplib.isofts.kiev.ua/handle/123456789/118303
work_keys_str_mv AT boykovg applicationofferroelectricstocreateelectroluminescentindicatorsoftemperature
AT zayatsns applicationofferroelectricstocreateelectroluminescentindicatorsoftemperature