Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures
We investigated the effect of hydrostatic pressure on relaxation characteristics
 of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min
 exposure to a pressure of 8 kbars results in reduction of the integral density of surface
 states, while exer...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118305 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862544948696449024 |
|---|---|
| author | Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. |
| author_facet | Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. |
| citation_txt | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We investigated the effect of hydrostatic pressure on relaxation characteristics
of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min
exposure to a pressure of 8 kbars results in reduction of the integral density of surface
states, while exerting no influence on the generation centers in the bulk.
|
| first_indexed | 2025-11-25T04:24:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118305 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T04:24:24Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. 2017-05-29T16:39:22Z 2017-05-29T16:39:22Z 2012 Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ. 1560-8034 PACS 73.40.Rw https://nasplib.isofts.kiev.ua/handle/123456789/118305 We investigated the effect of hydrostatic pressure on relaxation characteristics
 of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min
 exposure to a pressure of 8 kbars results in reduction of the integral density of surface
 states, while exerting no influence on the generation centers in the bulk. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures Article published earlier |
| spellingShingle | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. |
| title | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_full | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_fullStr | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_full_unstemmed | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_short | Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_sort | effect of pressure on the properties of al-sio₂-n-si<ni> structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118305 |
| work_keys_str_mv | AT vlasovsi effectofpressureonthepropertiesofalsio2nsiltnistructures AT ovsyannikovav effectofpressureonthepropertiesofalsio2nsiltnistructures AT ismailovbk effectofpressureonthepropertiesofalsio2nsiltnistructures AT kuchkarovbh effectofpressureonthepropertiesofalsio2nsiltnistructures |