Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Vlasov, S.I., Ovsyannikov, A.V., Ismailov, B.K., Kuchkarov, B.H.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118305
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ.

We investigated the effect of hydrostatic pressure on relaxation characteristics
 of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min
 exposure to a pressure of 8 kbars results in reduction of the integral density of surface
 states, while exer...