APA (7th ed.) Citation

Baranskii, P., & Gaidar, G. (2012). Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Baranskii, P.I, and G.P Gaidar. "Peculiarities of Thermoannealing in N-Si and N-Ge Crystals with Oxygen Impurity." Semiconductor Physics Quantum Electronics & Optoelectronics 2012.

MLA (8th ed.) Citation

Baranskii, P.I, and G.P Gaidar. "Peculiarities of Thermoannealing in N-Si and N-Ge Crystals with Oxygen Impurity." Semiconductor Physics Quantum Electronics & Optoelectronics, 2012.

Warning: These citations may not always be 100% accurate.