Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• Автори: Baranskii, P.I., Gaidar, G.P.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118307
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Peculiarities of thermoannealing in n-Si and n-Ge crystals
 with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ.

. Investigated in this work were changes in the concentration of charge carriers
 ne and their mobilities u, which occur under the influence of thermoannealing of n - Si
 and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si
 samples was carried out both at 450 °C and 650 °C. The results of the influence of twostage
 (combined) thermoannealing have been presented. In the first series of
 experiments, the annealing was performed at 450 °C with varied duration (from 5 to
 45 h) at the beginning, and then it was carried out for 40 hours at 650 °C. The second
 series of experiments was as follows: the annealing at 450 °C for 45-hour duration, then
 the annealing at 650 °C, which was carried out for various periods of time
 (5, 10, 20, 45, 66 hours). The observations for changes of ne and u were carried out both
 at the temperature 300 and 77 K. It is ascertained that changing the main parameters (ne
 and u) in n  Ge As heavily doped single crystals, as a result of the series of
 thermoannealings (duration 30 min in each case) within the temperature range from 540
 to 900 °C, is non-monotonous due to transformation of the thermodonors TD - I into
 TD-II .