Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide
The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal
 layer has a nanostructured surface, have been investigated. The photoresponse spectra of
 these heterostructures have been found as essentially dependent on surface topology of
 oxide. The obtained...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118313 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862688332645924864 |
|---|---|
| author | Katerynchuk, V.M. Kudrynskyi, Z.R. |
| author_facet | Katerynchuk, V.M. Kudrynskyi, Z.R. |
| citation_txt | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal
layer has a nanostructured surface, have been investigated. The photoresponse spectra of
these heterostructures have been found as essentially dependent on surface topology of
oxide. The obtained results indicate that In₂O₃ oxide is not only an active component of
the structure but also acts as a diffraction cell element. Oxide surface topology was
investigated using the atomic-force microscope technique. Under different conditions of
InSe oxidation, the sample surfaces contained nanoformations preferably in the form of
nano-islands. Their location acquired both disordered and ordered characters. A
dimensional optical effect in the oxide layer was found to be due to the anisotropic light
absorption in InSe. The higher deviation of incident light from its normal direction due to
a nanostructured surface is, the higher variation in generation of carriers in this
semiconductor is. These changes consist in the energy broadening of the heterostructure
photoresponse spectrum as well as in peculiarities of the excitonic line. The higher
density and ordering of the nanoneedles on the oxide surface is, the higher long-wave
shift and more intense excitonic peak in spectrum takes place.
|
| first_indexed | 2025-12-07T16:08:51Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118313 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:08:51Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Katerynchuk, V.M. Kudrynskyi, Z.R. 2017-05-29T16:48:42Z 2017-05-29T16:48:42Z 2012 Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 61.14.Lj, 81.16.Dn, 81.65.Mq https://nasplib.isofts.kiev.ua/handle/123456789/118313 The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal
 layer has a nanostructured surface, have been investigated. The photoresponse spectra of
 these heterostructures have been found as essentially dependent on surface topology of
 oxide. The obtained results indicate that In₂O₃ oxide is not only an active component of
 the structure but also acts as a diffraction cell element. Oxide surface topology was
 investigated using the atomic-force microscope technique. Under different conditions of
 InSe oxidation, the sample surfaces contained nanoformations preferably in the form of
 nano-islands. Their location acquired both disordered and ordered characters. A
 dimensional optical effect in the oxide layer was found to be due to the anisotropic light
 absorption in InSe. The higher deviation of incident light from its normal direction due to
 a nanostructured surface is, the higher variation in generation of carriers in this
 semiconductor is. These changes consist in the energy broadening of the heterostructure
 photoresponse spectrum as well as in peculiarities of the excitonic line. The higher
 density and ordering of the nanoneedles on the oxide surface is, the higher long-wave
 shift and more intense excitonic peak in spectrum takes place. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide Article published earlier |
| spellingShingle | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide Katerynchuk, V.M. Kudrynskyi, Z.R. |
| title | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide |
| title_full | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide |
| title_fullStr | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide |
| title_full_unstemmed | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide |
| title_short | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide |
| title_sort | photoelectric properties of in₂o₃-inse heterostructure with nanostructured oxide |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118313 |
| work_keys_str_mv | AT katerynchukvm photoelectricpropertiesofin2o3inseheterostructurewithnanostructuredoxide AT kudrynskyizr photoelectricpropertiesofin2o3inseheterostructurewithnanostructuredoxide |