Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide
The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal
 layer has a nanostructured surface, have been investigated. The photoresponse spectra of
 these heterostructures have been found as essentially dependent on surface topology of
 oxide. The obtained...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118313 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ. |