Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Katerynchuk, V.M., Kudrynskyi, Z.R.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118313
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ.

The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal
 layer has a nanostructured surface, have been investigated. The photoresponse spectra of
 these heterostructures have been found as essentially dependent on surface topology of
 oxide. The obtained...