Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions
The nonlinear boundary axially symmetric problem of heat conduction for the thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion that generates heat has been considered. Using the introduced function, the partial linearization of the original problem has been carri...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118314 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Gavrysh, V.I. 2017-05-29T16:50:26Z 2017-05-29T16:50:26Z 2012 Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 74.25.fc https://nasplib.isofts.kiev.ua/handle/123456789/118314 The nonlinear boundary axially symmetric problem of heat conduction for the thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion that generates heat has been considered. Using the introduced function, the partial linearization of the original problem has been carried out. With the proposed piecewiselinear approximation of temperature at the boundary surface of the foreign inclusion and on the contact surface of the homogeneous elements of the layer, the problem has been completely linearized. The analytical solution of this problem of finding the introduced function using Hankel integral transform has been formed. The formulae for calculating the desired temperature have been derived. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| spellingShingle |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions Gavrysh, V.I. |
| title_short |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_full |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_fullStr |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_full_unstemmed |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_sort |
thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| author |
Gavrysh, V.I. |
| author_facet |
Gavrysh, V.I. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The nonlinear boundary axially symmetric problem of heat conduction for the
thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion
that generates heat has been considered. Using the introduced function, the partial
linearization of the original problem has been carried out. With the proposed piecewiselinear
approximation of temperature at the boundary surface of the foreign inclusion and
on the contact surface of the homogeneous elements of the layer, the problem has been
completely linearized. The analytical solution of this problem of finding the introduced
function using Hankel integral transform has been formed. The formulae for calculating
the desired temperature have been derived.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118314 |
| citation_txt |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. |
| work_keys_str_mv |
AT gavryshvi thermalstatemodelinginthermosensitiveelementsofmicroelectronicdeviceswithreachthroughforeigninclusions |
| first_indexed |
2025-12-07T15:53:04Z |
| last_indexed |
2025-12-07T15:53:04Z |
| _version_ |
1850865389389479936 |