Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions
The nonlinear boundary axially symmetric problem of heat conduction for the
 thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion
 that generates heat has been considered. Using the introduced function, the partial
 linearization of the origina...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118314 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thermal state modeling in thermosensitive elements of
 microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862682444425068544 |
|---|---|
| author | Gavrysh, V.I. |
| author_facet | Gavrysh, V.I. |
| citation_txt | Thermal state modeling in thermosensitive elements of
 microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The nonlinear boundary axially symmetric problem of heat conduction for the
thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion
that generates heat has been considered. Using the introduced function, the partial
linearization of the original problem has been carried out. With the proposed piecewiselinear
approximation of temperature at the boundary surface of the foreign inclusion and
on the contact surface of the homogeneous elements of the layer, the problem has been
completely linearized. The analytical solution of this problem of finding the introduced
function using Hankel integral transform has been formed. The formulae for calculating
the desired temperature have been derived.
|
| first_indexed | 2025-12-07T15:53:04Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118314 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:53:04Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gavrysh, V.I. 2017-05-29T16:50:26Z 2017-05-29T16:50:26Z 2012 Thermal state modeling in thermosensitive elements of
 microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 74.25.fc https://nasplib.isofts.kiev.ua/handle/123456789/118314 The nonlinear boundary axially symmetric problem of heat conduction for the
 thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion
 that generates heat has been considered. Using the introduced function, the partial
 linearization of the original problem has been carried out. With the proposed piecewiselinear
 approximation of temperature at the boundary surface of the foreign inclusion and
 on the contact surface of the homogeneous elements of the layer, the problem has been
 completely linearized. The analytical solution of this problem of finding the introduced
 function using Hankel integral transform has been formed. The formulae for calculating
 the desired temperature have been derived. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions Article published earlier |
| spellingShingle | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions Gavrysh, V.I. |
| title | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_full | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_fullStr | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_full_unstemmed | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_short | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_sort | thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118314 |
| work_keys_str_mv | AT gavryshvi thermalstatemodelinginthermosensitiveelementsofmicroelectronicdeviceswithreachthroughforeigninclusions |