Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• 1. Verfasser: Gavrysh, V.I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118314
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ.

The nonlinear boundary axially symmetric problem of heat conduction for the thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion that generates heat has been considered. Using the introduced function, the partial linearization of the original problem has been carri...