Electrophysical characteristics of large-size αSi-Si(Li) detector heterostructures
Electrophysical properties of large-size detector heterostructures based on a
 αSi-Si(Li) have been investigated in this paper. The results prove that these detector
 heterostructures are more effective as compared to the structures obtained using the
 conventional diffusion...
Збережено в:
| Опубліковано в: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2012 |
| ISSN: | 1560-8034 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118318 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrophysical characteristics of large-size αSi-Si(Li) detector
 heterostructures / R.A. Muminov, A.K. Saymbetov, Yo.K. Toshmurodov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 285-287. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Electrophysical properties of large-size detector heterostructures based on a
αSi-Si(Li) have been investigated in this paper. The results prove that these detector
heterostructures are more effective as compared to the structures obtained using the
conventional diffusion technique. One can certainly predict availability of highly
effective current-voltage and capacitance-voltage characteristics in these structures.
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| ISSN: | 1560-8034 |