The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• ISSN: 1560-8034
• Hauptverfasser: Bacherikov, Yu.Yu., Zhuk, A.G., Optasyuk, S.V., Okhrimenko, O.B., Kardashov, K.D., Kozitskiy, S.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118319
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The factors influencing luminescent properties
 of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ.

Considered in this paper is the model that combines appearance of defects
 responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
 Being based on analysis of the luminescence spectrum, the authors demonstrate the
 influence of mechanical destruction, impact of ultrasound, microwave radiation and
 pulsed magnetic field on the emission efficiency for centers of luminescence connected
 with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature
 synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals
 prepared according to the above method as well as more discrete differentiation of phases
 present in this material due to development and growth of inner boundaries and surface
 under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm