The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis

Considered in this paper is the model that combines appearance of defects
 responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
 Being based on analysis of the luminescence spectrum, the authors demonstrate the
 influence of mechanical destru...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2012
Main Authors: Bacherikov, Yu.Yu., Zhuk, A.G., Optasyuk, S.V., Okhrimenko, O.B., Kardashov, K.D., Kozitskiy, S.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118319
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The factors influencing luminescent properties
 of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Bacherikov, Yu.Yu.
Zhuk, A.G.
Optasyuk, S.V.
Okhrimenko, O.B.
Kardashov, K.D.
Kozitskiy, S.V.
author_facet Bacherikov, Yu.Yu.
Zhuk, A.G.
Optasyuk, S.V.
Okhrimenko, O.B.
Kardashov, K.D.
Kozitskiy, S.V.
citation_txt The factors influencing luminescent properties
 of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Considered in this paper is the model that combines appearance of defects
 responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
 Being based on analysis of the luminescence spectrum, the authors demonstrate the
 influence of mechanical destruction, impact of ultrasound, microwave radiation and
 pulsed magnetic field on the emission efficiency for centers of luminescence connected
 with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature
 synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals
 prepared according to the above method as well as more discrete differentiation of phases
 present in this material due to development and growth of inner boundaries and surface
 under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm
first_indexed 2025-12-01T07:24:26Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
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language English
last_indexed 2025-12-01T07:24:26Z
publishDate 2012
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Bacherikov, Yu.Yu.
Zhuk, A.G.
Optasyuk, S.V.
Okhrimenko, O.B.
Kardashov, K.D.
Kozitskiy, S.V.
2017-05-29T17:39:12Z
2017-05-29T17:39:12Z
2012
The factors influencing luminescent properties
 of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ.
1560-8034
PACS 61.72.Cc, 66.30.Lw, 78.55.Et
https://nasplib.isofts.kiev.ua/handle/123456789/118319
Considered in this paper is the model that combines appearance of defects
 responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
 Being based on analysis of the luminescence spectrum, the authors demonstrate the
 influence of mechanical destruction, impact of ultrasound, microwave radiation and
 pulsed magnetic field on the emission efficiency for centers of luminescence connected
 with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature
 synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals
 prepared according to the above method as well as more discrete differentiation of phases
 present in this material due to development and growth of inner boundaries and surface
 under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
Article
published earlier
spellingShingle The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
Bacherikov, Yu.Yu.
Zhuk, A.G.
Optasyuk, S.V.
Okhrimenko, O.B.
Kardashov, K.D.
Kozitskiy, S.V.
title The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
title_full The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
title_fullStr The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
title_full_unstemmed The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
title_short The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
title_sort factors influencing luminescent properties of zns:mn obtained by the method of one-stage synthesis
url https://nasplib.isofts.kiev.ua/handle/123456789/118319
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