The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
Considered in this paper is the model that combines appearance of defects
 responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
 Being based on analysis of the luminescence spectrum, the authors demonstrate the
 influence of mechanical destru...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118319 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The factors influencing luminescent properties
 of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862642746410401792 |
|---|---|
| author | Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. |
| author_facet | Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. |
| citation_txt | The factors influencing luminescent properties
 of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Considered in this paper is the model that combines appearance of defects
responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
Being based on analysis of the luminescence spectrum, the authors demonstrate the
influence of mechanical destruction, impact of ultrasound, microwave radiation and
pulsed magnetic field on the emission efficiency for centers of luminescence connected
with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature
synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals
prepared according to the above method as well as more discrete differentiation of phases
present in this material due to development and growth of inner boundaries and surface
under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm
|
| first_indexed | 2025-12-01T07:24:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118319 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T07:24:26Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. 2017-05-29T17:39:12Z 2017-05-29T17:39:12Z 2012 The factors influencing luminescent properties
 of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ. 1560-8034 PACS 61.72.Cc, 66.30.Lw, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/118319 Considered in this paper is the model that combines appearance of defects
 responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
 Being based on analysis of the luminescence spectrum, the authors demonstrate the
 influence of mechanical destruction, impact of ultrasound, microwave radiation and
 pulsed magnetic field on the emission efficiency for centers of luminescence connected
 with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature
 synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals
 prepared according to the above method as well as more discrete differentiation of phases
 present in this material due to development and growth of inner boundaries and surface
 under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis Article published earlier |
| spellingShingle | The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. |
| title | The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_full | The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_fullStr | The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_full_unstemmed | The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_short | The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_sort | factors influencing luminescent properties of zns:mn obtained by the method of one-stage synthesis |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118319 |
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