Complex index of refraction of indium nitride InN

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Akinlami, J.O., Bolaji, F.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118324
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ.

We have investigated the complex index of refraction of Indium Nitride (InN).
 We obtained refractive index which has the maximum value 2.59 at the photon energy
 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon
 energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant
 with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the
 complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV,
 the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the
 absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV
 and reflection coefficient which with the maximum value 0.49 at the photon energy
 5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the
 photon energy 5.30 eV.