Complex index of refraction of indium nitride InN
We have investigated the complex index of refraction of Indium Nitride (InN).
 We obtained refractive index which has the maximum value 2.59 at the photon energy
 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon
 energy 5.30 eV, the dielectri...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2012 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118324 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737934283702272 |
|---|---|
| author | Akinlami, J.O. Bolaji, F.M. |
| author_facet | Akinlami, J.O. Bolaji, F.M. |
| citation_txt | Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have investigated the complex index of refraction of Indium Nitride (InN).
We obtained refractive index which has the maximum value 2.59 at the photon energy
5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon
energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant
with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the
complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV,
the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the
absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV
and reflection coefficient which with the maximum value 0.49 at the photon energy
5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the
photon energy 5.30 eV.
|
| first_indexed | 2025-12-07T20:01:47Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118324 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:01:47Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Akinlami, J.O. Bolaji, F.M. 2017-05-29T18:04:06Z 2017-05-29T18:04:06Z 2012 Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS 78.20.Ci, 78.20.-e, 78.40.-q https://nasplib.isofts.kiev.ua/handle/123456789/118324 We have investigated the complex index of refraction of Indium Nitride (InN).
 We obtained refractive index which has the maximum value 2.59 at the photon energy
 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon
 energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant
 with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the
 complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV,
 the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the
 absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV
 and reflection coefficient which with the maximum value 0.49 at the photon energy
 5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the
 photon energy 5.30 eV. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Complex index of refraction of indium nitride InN Article published earlier |
| spellingShingle | Complex index of refraction of indium nitride InN Akinlami, J.O. Bolaji, F.M. |
| title | Complex index of refraction of indium nitride InN |
| title_full | Complex index of refraction of indium nitride InN |
| title_fullStr | Complex index of refraction of indium nitride InN |
| title_full_unstemmed | Complex index of refraction of indium nitride InN |
| title_short | Complex index of refraction of indium nitride InN |
| title_sort | complex index of refraction of indium nitride inn |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118324 |
| work_keys_str_mv | AT akinlamijo complexindexofrefractionofindiumnitrideinn AT bolajifm complexindexofrefractionofindiumnitrideinn |