Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

• Дата: 2012
• Автори: Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118325
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown / A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 288-293. — Бібліогр.: 19 назв. — англ.

Effect of magnetic field (up to 14 T) on current-voltage characteristics of silicon n⁺ -p diodes which manifests hysteresis loops related with low-temperature impurity breakdown has been studied. With growth of magnetic field, the hysteresis loops are narrowed and decreased in amplitude and then...