Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• ISSN: 1560-8034
• Hauptverfasser: Chuiko, G.P., Dvornik, O.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118330
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry / G.P.Chuiko, O.V.Dvornik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 31-35. — Бібліогр.: 7 назв. — англ.

The so-called loops of extremes exist for the modification of Cd₂As₂ without
 the center of symmetry. The maximal spin splitting of bands is observable along a
 direction normal to the main crystalline axis. The number of topological transitions is
 increased for the surfaces of equal energy in all valence bands. The energies of the
 extremes of bands and topological transitions are calculated within the generalized
 Kane’s and Kildal-Bodnar’s model for a modification without the center of symmetry. It
 was established from the indirect solutions of the dispersion equation k(ε) that the
 functions of the density of states near to the bottom of the conduction band change
 differently for different spin subbands with variation in energy. A similar situation is
 observed for the effective masses which demonstrate a nonlinear dependence on energy
 with a minimum caused by the degeneration of energy bands.