Spin polarization in semimagnetic semiconductor two barrier spin filters
The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier
 resonant tunneling system with a semimagnetic CdMnTe well is studied. The
 level splitting in the semimagnetic well under an external magnetic field, caused by giant
 Zeeman splitting, allows one t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118332 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Spin polarization in semimagnetic semiconductor two barrier spin filters / S. B. Lev, V. I. Sugakov, G. V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier
resonant tunneling system with a semimagnetic CdMnTe well is studied. The
level splitting in the semimagnetic well under an external magnetic field, caused by giant
Zeeman splitting, allows one to achieve a high level of spin polarization of the current
flowing through the spin filter. The current polarization degree depending on different
parameters of the system such as the carrier density, concentration of magnetic ions,
temperature, and the strength of the external magnetic and electric fields is analyzed.
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| ISSN: | 1560-8034 |