Spin polarization in semimagnetic semiconductor two barrier spin filters

The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier
 resonant tunneling system with a semimagnetic CdMnTe well is studied. The
 level splitting in the semimagnetic well under an external magnetic field, caused by giant
 Zeeman splitting, allows one t...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2007
Main Authors: Lev, S.B., Sugakov, V.I., Vertsimakha, G.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118332
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Spin polarization in semimagnetic semiconductor two barrier spin filters / S. B. Lev, V. I. Sugakov, G. V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 42-46. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier
 resonant tunneling system with a semimagnetic CdMnTe well is studied. The
 level splitting in the semimagnetic well under an external magnetic field, caused by giant
 Zeeman splitting, allows one to achieve a high level of spin polarization of the current
 flowing through the spin filter. The current polarization degree depending on different
 parameters of the system such as the carrier density, concentration of magnetic ions,
 temperature, and the strength of the external magnetic and electric fields is analyzed.
ISSN:1560-8034