Spin polarization in semimagnetic semiconductor two barrier spin filters
The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic field, caused by giant Zeeman splitting, allows one to achieve a high level o...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2007 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118332 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spin polarization in semimagnetic semiconductor two barrier spin filters / S. B. Lev, V. I. Sugakov, G. V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118332 |
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Lev, S.B. Sugakov, V.I. Vertsimakha, G.V. 2017-05-29T19:18:42Z 2017-05-29T19:18:42Z 2007 Spin polarization in semimagnetic semiconductor two barrier spin filters / S. B. Lev, V. I. Sugakov, G. V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 42-46. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 72.25.-b, 73.40.Ly, 75.+a https://nasplib.isofts.kiev.ua/handle/123456789/118332 The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic field, caused by giant Zeeman splitting, allows one to achieve a high level of spin polarization of the current flowing through the spin filter. The current polarization degree depending on different parameters of the system such as the carrier density, concentration of magnetic ions, temperature, and the strength of the external magnetic and electric fields is analyzed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Spin polarization in semimagnetic semiconductor two barrier spin filters Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Spin polarization in semimagnetic semiconductor two barrier spin filters |
| spellingShingle |
Spin polarization in semimagnetic semiconductor two barrier spin filters Lev, S.B. Sugakov, V.I. Vertsimakha, G.V. |
| title_short |
Spin polarization in semimagnetic semiconductor two barrier spin filters |
| title_full |
Spin polarization in semimagnetic semiconductor two barrier spin filters |
| title_fullStr |
Spin polarization in semimagnetic semiconductor two barrier spin filters |
| title_full_unstemmed |
Spin polarization in semimagnetic semiconductor two barrier spin filters |
| title_sort |
spin polarization in semimagnetic semiconductor two barrier spin filters |
| author |
Lev, S.B. Sugakov, V.I. Vertsimakha, G.V. |
| author_facet |
Lev, S.B. Sugakov, V.I. Vertsimakha, G.V. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier
resonant tunneling system with a semimagnetic CdMnTe well is studied. The
level splitting in the semimagnetic well under an external magnetic field, caused by giant
Zeeman splitting, allows one to achieve a high level of spin polarization of the current
flowing through the spin filter. The current polarization degree depending on different
parameters of the system such as the carrier density, concentration of magnetic ions,
temperature, and the strength of the external magnetic and electric fields is analyzed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118332 |
| citation_txt |
Spin polarization in semimagnetic semiconductor two barrier spin filters / S. B. Lev, V. I. Sugakov, G. V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
| work_keys_str_mv |
AT levsb spinpolarizationinsemimagneticsemiconductortwobarrierspinfilters AT sugakovvi spinpolarizationinsemimagneticsemiconductortwobarrierspinfilters AT vertsimakhagv spinpolarizationinsemimagneticsemiconductortwobarrierspinfilters |
| first_indexed |
2025-12-07T18:05:30Z |
| last_indexed |
2025-12-07T18:05:30Z |
| _version_ |
1850873720841699328 |