HgCdTe quantum wells grown by molecular beam epitaxy
CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were x ∼ 0.7 mol.frac. and d ∼ 35 nm, respectively, at both sides of the quantum we...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118333 |
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| Cite this: | HgCdTe quantum wells grown by molecular beam epitaxy / S.A.Dvoretsky, D.G.Ikusov. Z.D.Kvon, N.N.Mikhailov, V.G.Remesnik, R.N.Smirnov, Yu.G.Sidorov, V.A.Shvets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 47-53. — Бібліогр.: 25 назв. — англ. |
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Dvoretsky, S.A Ikusov, D.G. Kvon, Z.D. Mikhailov, N.N. Remesnik, V.G. Smirnov, R.N. Sidorov, Yu.G. Shvets, V.A. 2017-05-29T19:19:45Z 2017-05-29T19:19:45Z 2007 HgCdTe quantum wells grown by molecular beam epitaxy / S.A.Dvoretsky, D.G.Ikusov. Z.D.Kvon, N.N.Mikhailov, V.G.Remesnik, R.N.Smirnov, Yu.G.Sidorov, V.A.Shvets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 47-53. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS 07.60.Fs, 73.43.-f, 75.75.+q, 78.30.Fs, 81.05.Dz, 81.15.Hi https://nasplib.isofts.kiev.ua/handle/123456789/118333 CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were x ∼ 0.7 mol.frac. and d ∼ 35 nm, respectively, at both sides of the quantum well. The thickness and composition of epilayers during the growth were controlled by ellipsometry in situ. It was shown that the accuracy of thickness and composition were ∆x = ± 0.002, ∆d = ± 0.5 nm. The central part of spacers (10 nm thick) was doped by indium up to a carrier concentration of ∼10¹⁵ cm⁻³ . A CdTe cap layer 40 nm in thickness was grown to protect QW. The compositions of the spacer and QWs were determined by measuring the Е₁ and Е₁+∆₁ peaks in reflection spectra using layer-by-layer chemical etching. The galvanomagnetic investigations (the range of magnetic fields was 0 – 13 T) of the grown QW showed the presence of a 2D electron gas in all the samples. The 2D electron mobility µe = (2.4 – 3.5)×10⁵ cm² /(V·s) for the concentrations N = (1.5 – 3)×10¹¹ cm⁻² (x < 0.11) that confirms a high quality of the grown QWs. The work is partially supported by a complex integration project of SB RAS N 3.20. The authors are very grateful to L.D. Burdina for carrying out the GaAs substrate preparation and chemical layer-by-layer etching, V.A. Kartashov and I.N. Uzhakov for the growth of buffer layers, and T.I. Zakharyash for the fabricaton of Hall structures en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics HgCdTe quantum wells grown by molecular beam epitaxy Article published earlier |
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| title |
HgCdTe quantum wells grown by molecular beam epitaxy |
| spellingShingle |
HgCdTe quantum wells grown by molecular beam epitaxy Dvoretsky, S.A Ikusov, D.G. Kvon, Z.D. Mikhailov, N.N. Remesnik, V.G. Smirnov, R.N. Sidorov, Yu.G. Shvets, V.A. |
| title_short |
HgCdTe quantum wells grown by molecular beam epitaxy |
| title_full |
HgCdTe quantum wells grown by molecular beam epitaxy |
| title_fullStr |
HgCdTe quantum wells grown by molecular beam epitaxy |
| title_full_unstemmed |
HgCdTe quantum wells grown by molecular beam epitaxy |
| title_sort |
hgcdte quantum wells grown by molecular beam epitaxy |
| author |
Dvoretsky, S.A Ikusov, D.G. Kvon, Z.D. Mikhailov, N.N. Remesnik, V.G. Smirnov, R.N. Sidorov, Yu.G. Shvets, V.A. |
| author_facet |
Dvoretsky, S.A Ikusov, D.G. Kvon, Z.D. Mikhailov, N.N. Remesnik, V.G. Smirnov, R.N. Sidorov, Yu.G. Shvets, V.A. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in
thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy.
The composition and thickness (d) of wide-gap layers (spacers) were x ∼ 0.7 mol.frac.
and d ∼ 35 nm, respectively, at both sides of the quantum well. The thickness and
composition of epilayers during the growth were controlled by ellipsometry in situ. It
was shown that the accuracy of thickness and composition were ∆x = ± 0.002, ∆d =
± 0.5 nm. The central part of spacers (10 nm thick) was doped by indium up to a carrier
concentration of ∼10¹⁵ cm⁻³
. A CdTe cap layer 40 nm in thickness was grown to protect
QW. The compositions of the spacer and QWs were determined by measuring the Е₁ and
Е₁+∆₁ peaks in reflection spectra using layer-by-layer chemical etching. The galvanomagnetic
investigations (the range of magnetic fields was 0 – 13 T) of the grown QW
showed the presence of a 2D electron gas in all the samples. The 2D electron mobility
µe = (2.4 – 3.5)×10⁵
cm²
/(V·s) for the concentrations N = (1.5 – 3)×10¹¹ cm⁻² (x < 0.11)
that confirms a high quality of the grown QWs.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118333 |
| citation_txt |
HgCdTe quantum wells grown by molecular beam epitaxy / S.A.Dvoretsky, D.G.Ikusov. Z.D.Kvon, N.N.Mikhailov, V.G.Remesnik, R.N.Smirnov, Yu.G.Sidorov, V.A.Shvets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 47-53. — Бібліогр.: 25 назв. — англ. |
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| first_indexed |
2025-11-30T16:33:47Z |
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2025-11-30T16:33:47Z |
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