Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures
An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in terms of carrier mobilities, thickness of the layers, doping levels, and other...
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| Date: | 2007 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118334 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | An analytical formalism to optimize the photoconversion efficiency η of
hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This
model allows firstly the optimization of a p⁺
-i-n sandwich in terms of carrier mobilities,
thickness of the layers, doping levels, and others. Second, the geometry of grid fingers
that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized,
and the effect of non-zero incidence angles of Sun’s light has been included as well. The
optimization method has been applied to typical a-Si:H solar cells. The codes allow the
optimization of amorphous Si based solar cells in a wide range of parameters and are
available on the e-mail request. |
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