Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures
An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in terms of carrier mobilities, thickness of the layers, doping levels, and other...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118334 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118334 |
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Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. 2017-05-29T19:20:35Z 2017-05-29T19:20:35Z 2007 Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 72.20.Jv, 73.40.Cg, 84.60.Jt, 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/118334 An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in terms of carrier mobilities, thickness of the layers, doping levels, and others. Second, the geometry of grid fingers that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized, and the effect of non-zero incidence angles of Sun’s light has been included as well. The optimization method has been applied to typical a-Si:H solar cells. The codes allow the optimization of amorphous Si based solar cells in a wide range of parameters and are available on the e-mail request. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| spellingShingle |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. |
| title_short |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_full |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_fullStr |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_full_unstemmed |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_sort |
modeling of photo-conversion efficiency for hydrogenated amorphous si p-i-n structures |
| author |
Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. |
| author_facet |
Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
An analytical formalism to optimize the photoconversion efficiency η of
hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This
model allows firstly the optimization of a p⁺
-i-n sandwich in terms of carrier mobilities,
thickness of the layers, doping levels, and others. Second, the geometry of grid fingers
that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized,
and the effect of non-zero incidence angles of Sun’s light has been included as well. The
optimization method has been applied to typical a-Si:H solar cells. The codes allow the
optimization of amorphous Si based solar cells in a wide range of parameters and are
available on the e-mail request.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118334 |
| fulltext |
|
| citation_txt |
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ. |
| work_keys_str_mv |
AT sachenkoav modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT sokolovskyiio modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT kazakevitcha modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT shkrebtiiai modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT gasparif modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures |
| first_indexed |
2025-11-24T14:44:09Z |
| last_indexed |
2025-11-24T14:44:09Z |
| _version_ |
1850847217302110208 |