Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures
An analytical formalism to optimize the photoconversion efficiency η of
 hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This
 model allows firstly the optimization of a p⁺
 -i-n sandwich in terms of carrier mobilities,
 thickness of the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118334 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862538395862958080 |
|---|---|
| author | Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. |
| author_facet | Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. |
| citation_txt | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An analytical formalism to optimize the photoconversion efficiency η of
hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This
model allows firstly the optimization of a p⁺
-i-n sandwich in terms of carrier mobilities,
thickness of the layers, doping levels, and others. Second, the geometry of grid fingers
that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized,
and the effect of non-zero incidence angles of Sun’s light has been included as well. The
optimization method has been applied to typical a-Si:H solar cells. The codes allow the
optimization of amorphous Si based solar cells in a wide range of parameters and are
available on the e-mail request.
|
| first_indexed | 2025-11-24T14:44:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118334 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T14:44:09Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. 2017-05-29T19:20:35Z 2017-05-29T19:20:35Z 2007 Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 72.20.Jv, 73.40.Cg, 84.60.Jt, 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/118334 An analytical formalism to optimize the photoconversion efficiency η of
 hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This
 model allows firstly the optimization of a p⁺
 -i-n sandwich in terms of carrier mobilities,
 thickness of the layers, doping levels, and others. Second, the geometry of grid fingers
 that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized,
 and the effect of non-zero incidence angles of Sun’s light has been included as well. The
 optimization method has been applied to typical a-Si:H solar cells. The codes allow the
 optimization of amorphous Si based solar cells in a wide range of parameters and are
 available on the e-mail request. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures Article published earlier |
| spellingShingle | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures Sachenko, A.V. Sokolovskyi, I.O. Kazakevitch, A. Shkrebtii, A.I. Gaspari, F. |
| title | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_full | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_fullStr | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_full_unstemmed | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_short | Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures |
| title_sort | modeling of photo-conversion efficiency for hydrogenated amorphous si p-i-n structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118334 |
| work_keys_str_mv | AT sachenkoav modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT sokolovskyiio modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT kazakevitcha modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT shkrebtiiai modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures AT gasparif modelingofphotoconversionefficiencyforhydrogenatedamorphoussipinstructures |