Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Sachenko, A.V., Sokolovskyi, I.O., Kazakevitch, A., Shkrebtii, A.I., Gaspari, F.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118334
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures / A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 60-66. — Бібліогр.: 13 назв. — англ.

An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in terms of carrier mobilities, thickness of the layers, doping levels, and other...