Radiative recombination of the PVK/C60 molecular complexes with the radiation damages

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• Автори: Коbus, E.S., Dmytrenko, O.P., Kulish, N.P., Prylutskyy, Yu.I., Belyy, N.M., Syromyatnikov, V.G., Studzinskyy, S.L., Zabolotnyy, M.A., Gryn'ko, D.A., Shchur, D.V., Shlapatskaya, V.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118335
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Radiative recombination of the PVK/C60 molecular complexes with the radiation damages / Е.S. Коbus, О.P. Dmytrenko, N.P. Kulish, Yu.I. Prylutskyy, N.М. Belyy, V.G. Syromyatnikov, S.L. Studzinskyy, М.А. Zabolotnyy, D.А. Gryn'ko, D.V. Shchur, V.V. Shlapatskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 67-71. — Бібліогр.: 18 назв. — англ.

The relaxation processes of electronic excitations in the films composed from
 a mixture of the amorphous semiconductors of polyvinylcarbazole and C₆₀ fullerenes
 (PVC/C₆₀) with different contents of nanocluster molecules and beyond the threshold
 electron irradiation are studied. It is shown that, in the entire range of the concentrations
 of C₆₀ molecules, for which the molecular disperse state of a mixture retains, the
 complexes with the charge transfer due to the photogeneration of electron-hole pairs are
 observed in the PVC/C₆₀ films. The photoluminescence spectra indicate the presence of
 both the molecular emitting transitions and the recombination luminescence caused by
 the electron transfer in the composition of excitons from the matrix to impurity
 fullerenes. Depending on the content of C₆₀ molecules, the photoluminescence spectra
 are substantially reconstructed, reflecting the changes in the electron structure of
 molecular complexes. The nature of these changes retains with the introduction of
 radiation-induced damages under high-energy electron irradiation with an absorbed dose
 of 3.0 MGy.