Radiative recombination of the PVK/C60 molecular complexes with the radiation damages

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Authors: Коbus, E.S., Dmytrenko, O.P., Kulish, N.P., Prylutskyy, Yu.I., Belyy, N.M., Syromyatnikov, V.G., Studzinskyy, S.L., Zabolotnyy, M.A., Gryn'ko, D.A., Shchur, D.V., Shlapatskaya, V.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118335
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Radiative recombination of the PVK/C60 molecular complexes with the radiation damages / Е.S. Коbus, О.P. Dmytrenko, N.P. Kulish, Yu.I. Prylutskyy, N.М. Belyy, V.G. Syromyatnikov, S.L. Studzinskyy, М.А. Zabolotnyy, D.А. Gryn'ko, D.V. Shchur, V.V. Shlapatskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 67-71. — Бібліогр.: 18 назв. — англ.

The relaxation processes of electronic excitations in the films composed from a mixture of the amorphous semiconductors of polyvinylcarbazole and C₆₀ fullerenes (PVC/C₆₀) with different contents of nanocluster molecules and beyond the threshold electron irradiation are studied. It is shown that, in the entire range of the concentrations of C₆₀ molecules, for which the molecular disperse state of a mixture retains, the complexes with the charge transfer due to the photogeneration of electron-hole pairs are observed in the PVC/C₆₀ films. The photoluminescence spectra indicate the presence of both the molecular emitting transitions and the recombination luminescence caused by the electron transfer in the composition of excitons from the matrix to impurity fullerenes. Depending on the content of C₆₀ molecules, the photoluminescence spectra are substantially reconstructed, reflecting the changes in the electron structure of molecular complexes. The nature of these changes retains with the introduction of radiation-induced damages under high-energy electron irradiation with an absorbed dose of 3.0 MGy.