Photoconductivity in macroporous silicon with regular structure of macropores
The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon photoconductivity to bulk silicon photoconductivity achieves a maximum at t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118336 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The effects of the increase of photoconductivity in periodic macroporous
silicon structures depending on the size and period of cylindrical macropores are
investigated. It is obtained that the ratio of macroporous silicon photoconductivity to
bulk silicon photoconductivity achieves a maximum at the distance between macropores
equal to two thicknesses of the Schottky layer, which corresponds to the experimental
data. The increase of photoconductivity is due to both the large total surface area of
macropores and the existence of Schottky layers in the near-surface region of cylindrical
macropores.
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| ISSN: | 1560-8034 |