Photoconductivity in macroporous silicon with regular structure of macropores

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• Автори: Ivanov, V.I., Karachevtseva, L.A., Karas, N.I., Lytvynenko, O.A., Parshin, K.A., Sachenko, S.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118336
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ.

The effects of the increase of photoconductivity in periodic macroporous
 silicon structures depending on the size and period of cylindrical macropores are
 investigated. It is obtained that the ratio of macroporous silicon photoconductivity to
 bulk silicon photoconductivity achieves a maximum at the distance between macropores
 equal to two thicknesses of the Schottky layer, which corresponds to the experimental
 data. The increase of photoconductivity is due to both the large total surface area of
 macropores and the existence of Schottky layers in the near-surface region of cylindrical
 macropores.