Photoconductivity in macroporous silicon with regular structure of macropores
The effects of the increase of photoconductivity in periodic macroporous
 silicon structures depending on the size and period of cylindrical macropores are
 investigated. It is obtained that the ratio of macroporous silicon photoconductivity to
 bulk silicon photoconductivity...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118336 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862578188185501696 |
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| author | Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. |
| author_facet | Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. |
| citation_txt | Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effects of the increase of photoconductivity in periodic macroporous
silicon structures depending on the size and period of cylindrical macropores are
investigated. It is obtained that the ratio of macroporous silicon photoconductivity to
bulk silicon photoconductivity achieves a maximum at the distance between macropores
equal to two thicknesses of the Schottky layer, which corresponds to the experimental
data. The increase of photoconductivity is due to both the large total surface area of
macropores and the existence of Schottky layers in the near-surface region of cylindrical
macropores.
|
| first_indexed | 2025-11-26T16:29:21Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118336 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T16:29:21Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. 2017-05-29T19:21:59Z 2017-05-29T19:21:59Z 2007 Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 71.25.Rk, 81.60.Cp https://nasplib.isofts.kiev.ua/handle/123456789/118336 The effects of the increase of photoconductivity in periodic macroporous
 silicon structures depending on the size and period of cylindrical macropores are
 investigated. It is obtained that the ratio of macroporous silicon photoconductivity to
 bulk silicon photoconductivity achieves a maximum at the distance between macropores
 equal to two thicknesses of the Schottky layer, which corresponds to the experimental
 data. The increase of photoconductivity is due to both the large total surface area of
 macropores and the existence of Schottky layers in the near-surface region of cylindrical
 macropores. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoconductivity in macroporous silicon with regular structure of macropores Article published earlier |
| spellingShingle | Photoconductivity in macroporous silicon with regular structure of macropores Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. |
| title | Photoconductivity in macroporous silicon with regular structure of macropores |
| title_full | Photoconductivity in macroporous silicon with regular structure of macropores |
| title_fullStr | Photoconductivity in macroporous silicon with regular structure of macropores |
| title_full_unstemmed | Photoconductivity in macroporous silicon with regular structure of macropores |
| title_short | Photoconductivity in macroporous silicon with regular structure of macropores |
| title_sort | photoconductivity in macroporous silicon with regular structure of macropores |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118336 |
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