Photoconductivity in macroporous silicon with regular structure of macropores

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Ivanov, V.I., Karachevtseva, L.A., Karas, N.I., Lytvynenko, O.A., Parshin, K.A., Sachenko, S.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118336
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ.

The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon photoconductivity to bulk silicon photoconductivity achieves a maximum at t...