Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• 1. Verfasser: Popovych, K.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118337
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors / K.O. Popovych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 77-80. — Бібліогр.: 12 назв. — англ.

In this paper we present experimental results of the studying degradation
 processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder
 phosphors and theoretical simulation of energy parameters for the phosphor. Energy band
 diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-ZnS metal-semiconductor
 junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and
 Zn-Cu bonds have been calculated by the method based on a linear combination of
 atomic orbitals and pseudo-potential. Time dependences of brightness have been found to
 adequately fit a two-component exponential dependence. The first part of the exponential
 curve has been attributed to the diffusion processes taking place in Cu₂₋xS, and the second
 one to the diffusion of Cu in ZnS matrix.