Development of high-stable contact systems to gallium nitride microwave diodes
High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along with studies of Auger concentration depth profiles in the contacts both bef...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Zitieren: | Development of high-stable contact systems to gallium nitride microwave diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 1-8. — Бібліогр.: 20 назв. — англ. |
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Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kapitanchuk, L.M. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Sheremet, V.N. Sveshnikov, Yu.N. 2017-05-29T19:36:26Z 2017-05-29T19:36:26Z 2007 Development of high-stable contact systems to gallium nitride microwave diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 1-8. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 85.40.Ls https://nasplib.isofts.kiev.ua/handle/123456789/118341 High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along with studies of Auger concentration depth profiles in the contacts both before and after rapid thermal annealing. It is found that the Au−TiBx−Al−Ti−GaN contact layers with diffusion barriers retain both a layered structure of the contact metallization and the value of contact resistivity practically unchanged up to the temperature Т ≈ 700 ºС. At the same time, the layered structure of the metallization in standard Au−Ti−Al−Ti−GaN contact systems breaks down at such rapid thermal annealing. It is shown that the contact metallization of both types demonstrates the tunnel current flow mechanism in the temperature range 225−335 K, whereas the current flow mechanism is thermionic in the range 335−380 K, the Schottky barrier height being ~0.16 eV. For the best samples under consideration, the contact resistivity was no more than 10⁻⁶ Ohm∙cm² . en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Development of high-stable contact systems to gallium nitride microwave diodes Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Development of high-stable contact systems to gallium nitride microwave diodes |
| spellingShingle |
Development of high-stable contact systems to gallium nitride microwave diodes Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kapitanchuk, L.M. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Sheremet, V.N. Sveshnikov, Yu.N. |
| title_short |
Development of high-stable contact systems to gallium nitride microwave diodes |
| title_full |
Development of high-stable contact systems to gallium nitride microwave diodes |
| title_fullStr |
Development of high-stable contact systems to gallium nitride microwave diodes |
| title_full_unstemmed |
Development of high-stable contact systems to gallium nitride microwave diodes |
| title_sort |
development of high-stable contact systems to gallium nitride microwave diodes |
| author |
Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kapitanchuk, L.M. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Sheremet, V.N. Sveshnikov, Yu.N. |
| author_facet |
Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Kapitanchuk, L.M. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Sheremet, V.N. Sveshnikov, Yu.N. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
High-stable heat-resistant low-resistance contact systems with diffusion
barriers involving quasi-amorphous TiBx layers are suggested and studied. We have
performed the structural and morphological investigations along with studies of Auger
concentration depth profiles in the contacts both before and after rapid thermal annealing.
It is found that the Au−TiBx−Al−Ti−GaN contact layers with diffusion barriers retain
both a layered structure of the contact metallization and the value of contact resistivity
practically unchanged up to the temperature Т ≈ 700 ºС. At the same time, the layered
structure of the metallization in standard Au−Ti−Al−Ti−GaN contact systems breaks
down at such rapid thermal annealing. It is shown that the contact metallization of both
types demonstrates the tunnel current flow mechanism in the temperature range
225−335 K, whereas the current flow mechanism is thermionic in the range 335−380 K,
the Schottky barrier height being ~0.16 eV. For the best samples under consideration, the contact resistivity was no more than 10⁻⁶ Ohm∙cm²
.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118341 |
| citation_txt |
Development of high-stable contact systems to gallium nitride microwave diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 1-8. — Бібліогр.: 20 назв. — англ. |
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2025-12-07T13:35:18Z |
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