Buchumschlag

Development of high-stable contact systems to gallium nitride microwave diodes

High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along with studies of Auger concentration depth profiles...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2007
ISSN:	1560-8034
Hauptverfasser:	Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118341
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Development of high-stable contact systems to gallium nitride microwave diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 1-8. — Бібліогр.: 20 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2007)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
von: Belyaev, A.E., et al.
Veröffentlicht: (2008)

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2011)

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
von: Sorokin, V.M., et al.
Veröffentlicht: (2012)

A review of high ideality factor in gallium nitride-based light-emitting diode
von: Hedzir, A.S., et al.
Veröffentlicht: (2021)

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2010)

Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide
von: Venger, Ye.F., et al.
Veröffentlicht: (1999)

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
von: V. M. Sorokin, et al.
Veröffentlicht: (2012)

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
von: Boltovets, N.S., et al.
Veröffentlicht: (2000)

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
von: A. E. Belyaev, et al.
Veröffentlicht: (2011)

Luminescence of gallium-containing complex oxide crystal
von: Shevchuk, V.N.
Veröffentlicht: (2005)

Technology and experimental studies of contacts for microwave diodes based on interstitial phases
von: Boltovets, N.S., et al.
Veröffentlicht: (2001)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
von: Boltovets, N.S., et al.
Veröffentlicht: (2004)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2015)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
von: Kudryk, Ya.Ya., et al.
Veröffentlicht: (2019)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: A. E. Belyaev, et al.
Veröffentlicht: (2015)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
von: Boltovets, M.S., et al.
Veröffentlicht: (2010)

Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2019)

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis
von: Belyaev, A.E., et al.
Veröffentlicht: (2005)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
von: Sachenko, A.V., et al.
Veröffentlicht: (2012)

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
von: Arsentyev, I.N., et al.
Veröffentlicht: (2005)

Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
von: S. V. Dudin
Veröffentlicht: (2006)

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects
von: Dubovyi, V.K., et al.
Veröffentlicht: (2005)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2016)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
von: Boltovets, N.S., et al.
Veröffentlicht: (2006)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
von: Belyaev, A.E., et al.
Veröffentlicht: (2013)

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2010)

Reflection coefficient and optical conductivity of gallium nitride GaN
von: J. O. Akinlami, et al.
Veröffentlicht: (2012)

Reflection coefficient and optical conductivity of gallium nitride GaN
von: Akinlami, J.O., et al.
Veröffentlicht: (2012)

Contacts for silicon IMPATT and pick-off diodes
von: Boltovets, N.S., et al.
Veröffentlicht: (2000)

Optical approach to analysis of interaction of gallium nitride and weak magnetic fields
von: Red'ko, R.A.
Veröffentlicht: (2015)

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions
von: O. M. Hontaruk, et al.
Veröffentlicht: (2015)

Spectroscopic studies of RF discharge plasma at plasma-chemical etching of gallium nitride epitaxial structures
von: V. V. Hladkovskiy, et al.
Veröffentlicht: (2017)

Spectroscopic studies of RF discharge plasma at plasma-chemical etching of gallium nitride epitaxial structures
von: V. V. Hladkovskiy, et al.
Veröffentlicht: (2017)

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
von: A. E. Belyaev, et al.
Veröffentlicht: (2010)

Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
von: P. M. Romanets, et al.
Veröffentlicht: (2019)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
von: Belyaev, A.E., et al.
Veröffentlicht: (2013)

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
von: V. H. Vorobiov, et al.
Veröffentlicht: (2015)

Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics
von: Kudryk, Ya.Ya., et al.
Veröffentlicht: (2014)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
von: M. S. Boltovets, et al.
Veröffentlicht: (2010)