Dolgolenko, A., Varentsov, M., Gaidar, G., & Litovchenko, P. (2007). Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Dolgolenko, A.P, M.D Varentsov, G.P Gaidar, und P.G Litovchenko. "Dependence of the Defect Introduction Rate on the Dose of Irradiation of P-Si by Fast-pile Neutrons." Semiconductor Physics Quantum Electronics & Optoelectronics 2007.
MLA-Zitierstil (8. Ausg.)Dolgolenko, A.P, et al. "Dependence of the Defect Introduction Rate on the Dose of Irradiation of P-Si by Fast-pile Neutrons." Semiconductor Physics Quantum Electronics & Optoelectronics, 2007.
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