Dolgolenko, A., Varentsov, M., Gaidar, G., & Litovchenko, P. (2007). Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationDolgolenko, A.P, M.D Varentsov, G.P Gaidar, and P.G Litovchenko. "Dependence of the Defect Introduction Rate on the Dose of Irradiation of P-Si by Fast-pile Neutrons." Semiconductor Physics Quantum Electronics & Optoelectronics 2007.
MLA (8th ed.) CitationDolgolenko, A.P, et al. "Dependence of the Defect Introduction Rate on the Dose of Irradiation of P-Si by Fast-pile Neutrons." Semiconductor Physics Quantum Electronics & Optoelectronics, 2007.
Warning: These citations may not always be 100% accurate.