Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118342
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons / A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 9-14. — Бібліогр.: 11 назв. — англ.

We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature dependences of the effective concentration of c...