Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• Автори: Grushko, E.V., Maslyanchuk, O.L., Mathew, X., Motushchuk, V.V., Kosyachenko, L.A., Streltsov, E.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118343
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ.

A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
 a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
 theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
 the continuity equation and incorporating the surface recombination losses does not
 explain the measured spectra in the entire range of wavelengths, particularly the abovementioned
 decay in the short-wavelength region. The satisfactory description of the
 measured spectra is achieved by proposing a model, in which the surface recombination
 along with the Schottky effect resulted in the presence of a dead layer in the space-charge
 region is taken into account. By varying the parameters such as uncompensated carrier
 concentration and carrier lifetime, the above model can explain the actual photoresponse
 spectra.