Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
 a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
 theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
 the continuity equation and i...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2007 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118343 |
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| Zitieren: | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862720358401966080 |
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| author | Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. |
| author_facet | Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. |
| citation_txt | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
the continuity equation and incorporating the surface recombination losses does not
explain the measured spectra in the entire range of wavelengths, particularly the abovementioned
decay in the short-wavelength region. The satisfactory description of the
measured spectra is achieved by proposing a model, in which the surface recombination
along with the Schottky effect resulted in the presence of a dead layer in the space-charge
region is taken into account. By varying the parameters such as uncompensated carrier
concentration and carrier lifetime, the above model can explain the actual photoresponse
spectra.
|
| first_indexed | 2025-12-07T18:25:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118343 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:25:22Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. 2017-05-29T19:37:49Z 2017-05-29T19:37:49Z 2007 Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 84.60.Jt https://nasplib.isofts.kiev.ua/handle/123456789/118343 A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
 a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
 theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
 the continuity equation and incorporating the surface recombination losses does not
 explain the measured spectra in the entire range of wavelengths, particularly the abovementioned
 decay in the short-wavelength region. The satisfactory description of the
 measured spectra is achieved by proposing a model, in which the surface recombination
 along with the Schottky effect resulted in the presence of a dead layer in the space-charge
 region is taken into account. By varying the parameters such as uncompensated carrier
 concentration and carrier lifetime, the above model can explain the actual photoresponse
 spectra. The CdTe films used in this work were prepared as a
 part of the projects funded by PAPIIT-UNAM
 (IN115102) and CONACYT (38542-U). The study was
 supported by the State Foundation for Fundamental
 Investigations (Ministry of Education and Technology,
 Ukraine) within the Agreement F14/259-2007. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure Article published earlier |
| spellingShingle | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. |
| title | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
| title_full | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
| title_fullStr | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
| title_full_unstemmed | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
| title_short | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
| title_sort | spectral distribution of photoelectric quantum yield of thin-film au-cdte diode structure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118343 |
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