Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
The time dependences of changes of the electrophysical, mechanical, and light
 emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
 annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
 vacancies, interstitial po...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2007 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118345 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862713999583346688 |
|---|---|
| author | Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. |
| author_facet | Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. |
| citation_txt | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The time dependences of changes of the electrophysical, mechanical, and light
emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is
revealed.
|
| first_indexed | 2025-12-07T17:48:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118345 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:48:00Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. 2017-05-29T19:39:03Z 2017-05-29T19:39:03Z 2007 Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.72.Cc, 61.71.Ji, 71.55.Eq https://nasplib.isofts.kiev.ua/handle/123456789/118345 The time dependences of changes of the electrophysical, mechanical, and light
 emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
 annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
 vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is
 revealed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing Article published earlier |
| spellingShingle | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. |
| title | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_full | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_fullStr | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_full_unstemmed | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_short | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_sort | change of parameters of semiinsulated undoped gaas nonstoichiometric crystals under annealing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118345 |
| work_keys_str_mv | AT shutovsv changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing AT shtankoad changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing AT kurakvv changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing AT litvinovamb changeofparametersofsemiinsulatedundopedgaasnonstoichiometriccrystalsunderannealing |