Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2007
• Main Authors: Shutov, S.V., Shtan’ko, A.D., Kurak, V.V., Litvinova, M.B.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118345
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ.

The time dependences of changes of the electrophysical, mechanical, and light
 emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
 annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
 vacancies, interstitial po...