Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118346
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electroluminescent properties of Tb-doped carbon-enriched silicon oxide / S.I. Tiagulskyi, A.N. Nazarov, S.O. Gordienko, A.V. Vasin, A.V. Rusavsky, T.M. Nazarova, Yu.V. Gomeniuk, V.S. Lysenko, L. Rebohle, M. Voelskow, W. Skorupa, Y. Koshka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 34-40. — Бібліогр.: 30 назв. — англ.

An electroluminescent device utilizing a heterostructure of amorphous terbium
 doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The
 a - SiOx : C : Tb active layer was formed by RF magnetron sputtering of
 a - SiO₁₋x : Cx : H(:Tb) film followed by high-temperature oxidation. It was shown that,
 depending on the polarity of the applied voltage, the electroluminescence is either green
 or white, which can be attributed to different mechanisms of current transport through the
 oxide film – space charge limited bipolar double injection current for green
 electroluminescence and trap assisted tunneling or Fowler-Nordheim tunneling for white
 electroluminescence.