Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118346
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electroluminescent properties of Tb-doped carbon-enriched silicon oxide / S.I. Tiagulskyi, A.N. Nazarov, S.O. Gordienko, A.V. Vasin, A.V. Rusavsky, T.M. Nazarova, Yu.V. Gomeniuk, V.S. Lysenko, L. Rebohle, M. Voelskow, W. Skorupa, Y. Koshka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 34-40. — Бібліогр.: 30 назв. — англ.

An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron sputtering of a - SiO₁₋x : Cx : H(:Tb) film followed by high-temperature oxidation....