Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2014
• Автори: Rubish, V.M., Stefanovich, V.O., Maryan, V.M., Mykaylo, O.A., Shtets, P.P., Kaynts, D.I., Yurkin, I.M.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118348
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ.

The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glasses is basically built just of binary GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular fragments with homopolar Ge - Ge and S - S bonds. The phase structure arising in the glass matrix at crystallization corresponds to the structure of crystalline SbSI.